Where DA will be the deformation likely in graphene, kB could be the Boltzmann consistent, e would be the electron cost, ℏ Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that generates wafer-scale, solitary-orientation graphene on an insulating substrate. It is frequently generally known as epigraphene, https://x.com/hongyuxin20/status/1818527513301467413